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| geometry process details principal device types cmpd1001 series cmpd5001 series gross die per 5 inch wafer 103,344 process CPD89V switching diode high current diode chip process epitaxial planar die size 12.8 x 12.8 mils die thickness 7.1 mils anode bonding pad area 5.1 x 5.1 mils top side metalization al - 30,000? back side metalization au-as - 10,000? www.centralsemi.com r1 (22-march 2010) http://
process CPD89V typical electrical characteristics www.centralsemi.com r1 (22-march 2010) http:// |
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